期刊
APPLIED PHYSICS LETTERS
卷 85, 期 25, 页码 6128-6130出版社
AMER INST PHYSICS
DOI: 10.1063/1.1841453
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Single crystal ZnO nanowires are synthesized and configured as field-effect transistors. Photoluminescence and photoconductivity measurements show defect-related deep electronic states giving rise to green-red emission and absorption. Photocurrent temporal response shows that current decay time is significantly prolonged in vacuum due to a slower oxygen chemisorption process. The photoconductivity of ZnO nanowires is strongly polarization dependent. Collectively, these results demonstrate that ZnO nanowire is a remarkable optoelectronic material for nanoscale device applications. (C) 2004 American Institute of Physics.
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