期刊
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
卷 43, 期 6, 页码 458-462出版社
WILEY-BLACKWELL
DOI: 10.1002/mop.20501
关键词
millimetre-wave receiver module; indium phosphide; gallium arsenide; MMIC
This paper describes an integrated circuit-based, down-converting receiver module operating in the 176-200-GHz range. The multichip module incorporates a cascaded pair of indium phosphide (InP) monolithic microwave integrated circuit (MMIC) amplifiers, providing a combined gain of more than 30 dB over the 176-200-GHz band. The output from the amplifiers is fed to a subharmonically pumped InP passive-HEMT block down-converter that provides an IF output in the 0.5-15-GHz range with a local oscillator (LO) signal between 46 and 50 GHz. A gallium arsenide (GaAs) medium-power amplifier provides the LO drive for the mixer. For RF frequencies in the 176-185-GHz band, the receiver exhibits a typical CW down-conversion gain between 0 and 3 dB and a typical noise figure of 9 dB when operating at room temperature. For RF frequencies in the 190-196-GHz band, the receiver exhibits a typical CW down-conversion gain between 2 and 5 dB and a typical noise figure of 11 dB. (C) 2004 Wiley Periodicals, Inc.
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