Transparent organic field-effect transistors with polymeric source and drain electrodes fabricated by inkjet printing

Transparent organic field-effect transistors based on pentacene were fabricated on indium tin oxide (ITO)-coated glass using ITO as the gate electrode, Al2O3 grown by atomic layer deposition as the gate insulator, and an inkjet-printed conducting polymer poly(3,4-ethylenedioxythiophene):poly(4-styrenesulphonate) as the source and drain electrodes. The transistors combine an overall high transmittance (84% in the channel and 78% through source/drain electrodes) in the visible region, a field-effect mobility value of 0.3 cm(2)/V s, a threshold voltage of -0.2 V, a subthreshold slope of 0.9 V/decade, and an on/off current ratio of 10(5). (c) 2008 American Institute of Physics.