期刊
APPLIED PHYSICS LETTERS
卷 92, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.2837463
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资金
- Grants-in-Aid for Scientific Research [19054001] Funding Source: KAKEN
The remarkable etching reaction of single-walled carbon nanotubes (SWNTs) has been observed in their growth of the parameter-controlled plasma chemical vapor deposition (CVD). The time evolution study of the SWNTs growth leads to establishing a growth equation which can completely express the growth kinetics of SWNTs in the plasma CVD. The growth equation is found to reveal that there are several key parameters which directly affect the etching reaction of SWNTs. Furthermore, such kinetics of the SWNT etching in plasmas can perfectly be explained with a reactive ion etching model.
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