4.6 Article

Characterization of doped silicon in low carrier density region by terahertz frequency Faraday effect

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Physics, Applied

Terahertz emission from p-InAs due to the instantaneous polarization

R Adomavicius et al.

APPLIED PHYSICS LETTERS (2004)

Article Physics, Applied

Terahertz frequency Hall measurement by magneto-optical Kerr spectroscopy in InAs

R Shimano et al.

APPLIED PHYSICS LETTERS (2002)