期刊
APPLIED PHYSICS LETTERS
卷 93, 期 26, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3056655
关键词
carbon; dislocations; high-temperature effects; nanostructured materials; nanotechnology; Raman spectra; silicon compounds; sublimation; wide band gap semiconductors
资金
- French ANR
- European Community
- Spanish Government
- Consolider NANOSELECT [CSD2007-00041]
- Juan de la Cierva grant
An investigation of the early stage formation of graphene on the C face of 6H-silicon carbide (SiC) is presented. We show that the sublimation of few atomic layers of Si out of the SiC substrate is not homogeneous. In good agreement with the results of theoretical calculations it starts from defective sites, mainly dislocations that define nearly circular graphene layers, which have a pyramidal, volcanolike shape with a center chimney where the original defect was located. At higher temperatures, complete conversion occurs but, again, it is not homogeneous. Within the sample surface, the intensity of the Raman bands evidences inhomogeneous thickness.
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