4.6 Article

Frequency dependence of negative differential capacitance in Schottky diodes with InAs quantum dots

期刊

APPLIED PHYSICS LETTERS
卷 93, 期 10, 页码 -

出版社

AMER INST PHYSICS
DOI: 10.1063/1.2975169

关键词

-

资金

  1. National Science Council in Taiwan [962221-E-009-218]
  2. ATU Program of Ministry of Education [96W803]

向作者/读者索取更多资源

The frequency dependence of negative differential capacitance (NDC) in Schottky diodes with InAs quantum dots (QDs) is studied. The measured peak capacitances of NDC decay rapidly as the testing frequencies are higher than a few kilohertz. A kinetic model considering the testing signal is proposed and the capture rates of QDs are extracted. The simulation result is quantitatively consistent with the experimental data when the charging effect in QDs is included. (c) 2008 American Institute of Physics.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据