期刊
APPLIED PHYSICS LETTERS
卷 93, 期 10, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.2975169
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资金
- National Science Council in Taiwan [962221-E-009-218]
- ATU Program of Ministry of Education [96W803]
The frequency dependence of negative differential capacitance (NDC) in Schottky diodes with InAs quantum dots (QDs) is studied. The measured peak capacitances of NDC decay rapidly as the testing frequencies are higher than a few kilohertz. A kinetic model considering the testing signal is proposed and the capture rates of QDs are extracted. The simulation result is quantitatively consistent with the experimental data when the charging effect in QDs is included. (c) 2008 American Institute of Physics.
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