相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Passivation of Ge(100)/GeO2/high-kappa gate stacks using thermal oxide treatments
F. Bellenger et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2008)
Insights on fundamental mechanisms impacting Ge metal oxide semiconductor capacitors with high-k/metal gate stacks
P. Batude et al.
JOURNAL OF APPLIED PHYSICS (2007)
Gate oxide scaling down in HfO2-GaAs metal-oxide-semiconductor capacitor using germanium interfacial passivation layer
Hyoung-Sub Kim et al.
APPLIED PHYSICS LETTERS (2007)
Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics
Y. Q. Wu et al.
APPLIED PHYSICS LETTERS (2007)
Ultrathin HfO2 (equivalent oxide thickness=1.1 nm) metal-oxide-semiconductor capacitors on n-GaAs substrate with germanium passivation
Hyoung-Sub Kim et al.
APPLIED PHYSICS LETTERS (2006)
Hafnium titanate bilayer structure multimetal dielectric nMOSCAPs
SJ Rhee et al.
IEEE ELECTRON DEVICE LETTERS (2006)
Metal gate-HfO2 MOS structures on GaAs substrate with and without Si interlayer
IJ Ok et al.
IEEE ELECTRON DEVICE LETTERS (2006)
Aggressively scaled ultrathin undoped HfO2 gate dielectric (EOT<0.7 nm) with TaN gate electrode using engineered interface layer
C Choi et al.
IEEE ELECTRON DEVICE LETTERS (2005)
Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition
PD Ye et al.
APPLIED PHYSICS LETTERS (2004)
Role of Ga2O3 template thickness and gadolinium mole fraction in GdxGa0.4-xO0.6/Ga2O3 gate dielectric stacks on GaAs
M Passlack et al.
APPLIED PHYSICS LETTERS (2003)