The polarity of molecular-beam epitaxy grown ZnO films was controlled on nitrided c-sapphire substrate by modifying the interface between the ZnO buffer layer and the nitrided sapphire. The ZnO film grown on nitrided sapphire was proven to be Zn-polar while the O-polar one was obtained by using gallium predeposition on nitrided sapphire, which was confirmed by coaxial impact collision ion scattering spectroscopy and chemical etching effect. The Zn-polar ZnO film showed higher growth rate, slightly better quality, and different surface morphology in comparison to the O-polar one. (C) 2005 American Institute of Physics.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据