This letter focuses on the kinetics of the light-induced-degradation in multicrystalline silicon, comparing electronic grade and strongly compensated solar-grade materials. In electronic grade material, the results fit well with the models developed for Czochralski grown single-crystals. In contrast, in solar grade material, the light-induced-degradation kinetics are much slower and cannot be described by the existing models. We discuss how the formation of boron-oxygen complexes may be altered by the effects of compensation. (c) 2008 American Institute of Physics.
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