Multilayer atom chips for versatile atom micromanipulation

We employ a combination of optical and electron-beam lithography to create an atom chip combining submicron wire structures with larger conventional wires on a single substrate. The multilayer fabrication enables crossed wire configurations, greatly enhancing the flexibility in designing potentials for ultracold quantum gases and Bose-Einstein condensates. Large current densities of > 6x10(7) A/cm(2) and high voltages of up to 65 V across 0.3 mu m gaps are supported by even the smallest wire structures. We experimentally demonstrate the flexibility of the next generation atom chip by producing Bose-Einstein condensates in magnetic traps created by a combination of wires involving all different fabrication methods and structure sizes. (c) 2008 American Institute of Physics.