4.6 Article

Gate control of spin transport in multilayer graphene

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APPLIED PHYSICS LETTERS
卷 92, 期 21, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.2937836

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We experimentally studied the gate voltage dependence of spin transport in multilayer graphene (MLG) using the nonlocal spin detection technique. We found that the spin signal is a monotonically decreasing linear function of the resistance of MLG, which is characteristic of the intermediate interfacial transparency between the MLG and the ferromagnetic electrodes (Co). The linear relation indicates a large spin relaxation length significantly exceeding 8 mu m. This shows the superiority of MLG for the utilization of the graphite-based spintronic devices. (c) 2008 American Institute of Physics.

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