Method for full Bloch sphere control of a localized spin via a single electrical gate

We calculate the dependence on an applied electric field of the g tensor of a single electron in a self-assembled InAs/GaAs quantum dot. We identify dot sizes and shapes for which one in-plane component of the g tensor changes sign for realistic electric fields, and show that this should permit full Bloch sphere control of the electron spin in the quantum dot using only a static magnetic field and a single vertical electric gate. (c) 2008 American Institute of Physics.