Controlled n-type doping of AlN:Si films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy -: art. no. 024106

We study the properties of Si-doped AlN films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy. Whereas nominally undoped AlN films are invariably insulating in nature, Si-doped films are found to be semiconducting with an electron concentration up to 7.4x10(17) cm(-3), and a resistivity approaching 1 Omega cm at room temperature. Even heavy Si-doping (1x10(20) cm(-3)) does not degrade the structural properties of the AlN films. The morphology of these films is characterized by Si-induced step-bunching, but remains smooth with a rms roughness of about 1 nm. (C) 2005 American Institute of Physics.