4.6 Article

Metal-insulator transition-induced electrical oscillation in vanadium dioxide thin film

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APPLIED PHYSICS LETTERS
卷 92, 期 16, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.2911745

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  1. National IT Industry Promotion Agency (NIPA), Republic of Korea [A1100-0801-3002] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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In this letter, we report an observation of room temperature electrical oscillation in vanadium dioxide (VO2), a representative strongly correlated material showing a metal-insulator transition. An electric circuit for the oscillation is simply composed of a voltage source and two-terminal VO2 thin film device serially connected with a standard resistor. The systematic procedures where the oscillation occurred were explained based on the electrical relationship between the VO2 device and resistor, and the generation window of the oscillation was determined. In particular, the oscillation frequency could be controlled by adjusting an external voltage and increased up to >0.5 MHz. (c) 2008 American Institute of Physics.

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