期刊
APPLIED PHYSICS LETTERS
卷 93, 期 26, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3063046
关键词
Curie temperature; ferromagnetic materials; gallium arsenide; hole mobility; III-V semiconductors; impurity states; magnetic semiconductors; magnetic thin films; manganese compounds; semiconductor doping; semiconductor thin films; wide band gap semiconductors
资金
- National Science Foundation [DMR06-03752]
- Director, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, of the U. S. Department of Energy [DE-AC02-05CH11231]
We investigate the effect compensating Mn acceptors in Ga1-xMnxAs films by doping with Si donors. For Ga1-xMnxAs with low Mn content (e.g., x < 0.033), doping by Si decreases the Curie temperature T-C compared to undoped Ga1-xMnxAs. At high values of x, however (e.g., x>0.10), Si doping is found to increase T-C. We ascribe this to an increase in the hole mobility in high x samples due to changes in the relative occupancy of the hole impurity band associated with compensation by the Si donors.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据
分享论文
