Carrier relaxation dynamics in InAs/InP quantum dots

The electronic properties of InAs/InP(113)B double-cap quantum dots (QDs) emitting around 1.55 mu m are investigated. The carrier dynamics in QDs is studied by nonresonant time-resolved photoluminescence experiments. This analysis reveals the electronic structure of the QDs and the transient filling of the confined levels. Under low excitation densities, the spontaneous exciton lifetime is estimated and compared to time-resolved experiments. Under high excitation density, a direct Auger recombination effect is identified. The temperature analysis enables us to distinguish Auger and phonon-assisted relaxation processes. (C) 2008 American Institute of Physics.