期刊
APPLIED PHYSICS EXPRESS
卷 7, 期 2, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.7567/APEX.7.024202
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资金
- National Research Foundation of Korea (NRF)
- Korean Government (MEST) [2011-0028769, 2013-044975]
- National Research Foundation of Korea [2011-0028769, 2009-00454] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We demonstrate highly uniform resistive-switching (RS) characteristics of an SiN nanorod (NR) device fabricated by nanosphere lithography. In the RS experiments, variations in set and reset voltages for the SiN NR device are dramatically reduced to 0.2V from 0.45 V in conventional SiN thin films. In addition, the resistance ratio (10(3)) between set and reset states is larger and stably maintained without any degradation. As a result, in the resistive random access memory (RRAM) cells with a filament-based RS mechanism, the RS behavior of NR-based RS materials is more uniform than that of the conventional films as a result of reducing the number of conducting paths in the SiN layer. (C) 2014 The Japan Society of Applied Physics
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