4.5 Article

InGaN quantum dot green light-emitting diodes with negligible blue shift of electroluminescence peak wavelength

期刊

APPLIED PHYSICS EXPRESS
卷 7, 期 2, 页码 -

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IOP PUBLISHING LTD
DOI: 10.7567/APEX.7.025203

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资金

  1. National Basic Research Program of China [2013CB632804, 2011CB301900, 2012CB3155605]
  2. National Natural Science Foundation of China [61176015, 61210014, 51002085, 61321004, 61307024, 61176059]
  3. High Technology Research and Development Program of China [2011AA03A112, 2011AA03A106, 2011AA03A105, 2012AA050601]

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InGaN quantum dot (QD) light-emitting diodes (LEDs) were grown by metalorganic vapor phase epitaxy using an interruption method. As the injection current density increased from 2 to 88A/cm(2), the peak electroluminescence (EL) wavelength of the LED remained almost constant at around 527 nm. The negligible blue shift indicates that the quantum-confined Stark effect induced by piezoelectric polarization is suppressed well in InGaN QDs because of strain relaxation. Temperature-dependent EL spectra measurements indicate that the capture of electrons by QDs needs further improvement because of severe electron overflow to the p-type region. In addition, the peak EL wavelength is found to be abnormally longer than the photoluminescence wavelength. (C) 2014 The Japan Society of Applied Physics

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