4.5 Article

Influence of GaN Stress on Threshold Voltage Shift in AlGaN/GaN High-Electron-Mobility Transistors on Si under Off-State Electrical Bias

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Physics, Applied

Time-dependent degradation of AlGaN/GaN high electron mobility transistors under reverse bias

Matteo Meneghini et al.

APPLIED PHYSICS LETTERS (2012)

Article Physics, Applied

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

S. Tripathy et al.

APPLIED PHYSICS LETTERS (2012)

Article Materials Science, Multidisciplinary

Micro-Raman spectroscopy observation of field-induced strain relaxation in AlGaN/GaN heterojunction field-effect transistors

Shaobo Dun et al.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2012)

Article Crystallography

Surface characterization of AlGaN grown on Si (111) substrates

Xu Pan et al.

JOURNAL OF CRYSTAL GROWTH (2011)

Article Engineering, Electrical & Electronic

High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate

Sefa Demirtas et al.

MICROELECTRONICS RELIABILITY (2010)

Article Engineering, Electrical & Electronic

Breakdown Enhancement of AlGaN/GaN HEMTs on 4-in Silicon by Improving the GaN Quality on Thick Buffer Layers

Susai Lawrence Selvaraj et al.

IEEE ELECTRON DEVICE LETTERS (2009)

Article Engineering, Electrical & Electronic

GaN HEMT reliability

J. A. del Alamo et al.

MICROELECTRONICS RELIABILITY (2009)

Article Engineering, Electrical & Electronic

High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates

Y. Dora et al.

IEEE ELECTRON DEVICE LETTERS (2006)

Article Physics, Applied

Piezoelectric strain in AlGaN/GaN heterostructure field-effect transistors under bias

A Sarua et al.

APPLIED PHYSICS LETTERS (2006)

Article Physics, Applied

Micro-Raman investigation of strain in GaN and AlxGa1-xN/GaN heterostructures grown on Si(111)

S Tripathy et al.

JOURNAL OF APPLIED PHYSICS (2002)