Low-Voltage, High-Mobility Air-Stable Ambipolar Organic Field-Effect Transistors with a Voltage-Dependent Off-Current State and Modest Operational Stability

High-performance air-stable ambipolar organic field-effect transistors (OFETs) working at low voltages are demonstrated. Pentacene/N, N'-ditridecylperylene- 3,4,9,10-tetracarboxylic di-imide (PTCDI-C13) and polystyrene-modified anodized Al2O3 act as the active layer and dielectric layer, respectively. A voltage-dependent off-current state and different threshold voltage shift characteristics from that of unipolar OFETs are observed, which is of great importance in practical applications such as integrated circuits. The devices have hole and electron mobilities as high as 0.5 and 0.2cm(2) V-1 s(-1), respectively, with working voltages between -5 and 8 V, a high on/off ratio from 10(4) to 10(5), and a small threshold-voltage shift. (C) 2013 The Japan Society of Applied Physics