期刊
APPLIED PHYSICS EXPRESS
卷 6, 期 2, 页码 -出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.7567/APEX.6.025502
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资金
- Grants-in-Aid for Scientific Research [23360129] Funding Source: KAKEN
Control of the diameter and pitch of InGaAs nanowire arrays in selective-area metalorganic vapor-phase epitaxy was investigated. It was found that their nucleation was strongly dependent on the geometry of the mask, resulting in the difficulty of nucleation for a larger mask pitch, particularly for an opening diameter of less than 50 nm. Precise adjustment of the V/III ratio enabled us to control the nucleation independently of the mask pitch for smaller openings, and we successfully obtained 30-nm-diameter InGaAs nanowires independently of the mask pitch by the proposing V/III-ratio-controlled two-step growth method. (C) 2013 The Japan Society of Applied Physics
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