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注意:仅列出部分参考文献,下载原文获取全部文献信息。AlGaN/GaN/AlGaN Double Heterostructures Grown on 200 mm Silicon (111) Substrates with High Electron Mobility
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Domenica Visalli et al.
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High-Performance 0.1-μm Gate AlGaN/GaN HEMTs on Silicon With Low-Noise Figure at 20 GHz
Haifeng Sun et al.
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Growth of GaN/AlGaN on 200 mm diameter silicon (111) wafers by MOCVD
Adam R. Boyd et al.
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AlGaN/GaN heterostructure field-effect transistors on 4H-SiC substrates with current-gain cutoff frequency of 190GHz
Masataka Higashiwaki et al.
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Suppression of dynamic on-resistance increase and gate charge measurements in high-voltage GaN-HEMTs with optimized field-plate structure
Wataru Saito et al.
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GaN growth on 150-mm-diameter (111) Si substrates
Akinori Ubukata et al.
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High temperature performance of AlGaN/GaN HEMTs on Si substrates
W. S. Tan et al.
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Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates
XL Wang et al.
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A Chini et al.
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Growth mechanism of atmospheric pressure MOVPE of GaN and its alloys: gas phase chemistry and its impact on reactor design
K Matsumoto et al.
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