期刊
APPLIED PHYSICS EXPRESS
卷 5, 期 8, 页码 -出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/APEX.5.082101
关键词
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资金
- Defense Advanced Research Program Agency [W911NF-10-2-0023]
- U.S. Army Research Laboratory [W911NF-10-2-0023]
Improvements of the internal quantum efficiency by reduction of the threading dislocation density and of the light extraction by using UV transparent p-type cladding and contact layers, UV reflecting ohmic contact, and chip encapsulation with optimized shape and refractive index allowed us to obtain the external quantum efficiency of 10.4% at 20mA CW current with the output power up to 9.3 mW at 278 nm for AlGaN-based deep-ultraviolet light-emitting diodes grown on sapphire substrates. (C) 2012 The Japan Society of Applied Physics
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