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Organic homojunction diodes with a high built-in potential: Interpretation of the current-voltage characteristics by a generalized Einstein relation

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PHYSICAL REVIEW LETTERS
卷 94, 期 3, 页码 -

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AMERICAN PHYSICAL SOC
DOI: 10.1103/PhysRevLett.94.036601

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We realize p- and n-type doping of the organic semiconductor zinc-phthalocyanine using a novel strong organic donor. This allows us to demonstrate the first stable and reproducible organic p-n homojunctions. The diodes show very high built-in potentials, attractive, e.g., for organic solar cells. However, the diode characteristics cannot be described by the standard Shockley theory of the p-n junction since the ideality factor strongly increases with decreasing temperature. We show that this behavior can be explained by deviations from the Einstein relation for disordered materials.

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