Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy

N-type Ga2O3 homoepitaxial thick films were grown on beta-Ga2O3(010) substrates by ozone molecular beam epitaxy. The epitaxial growth rate was increased by more than ten times by changing from the (100) plane to the (010) plane. The carrier concentration of the epitaxial layers could be varied within the range of 10(16)-10(19) cm(-3) by changing the Sn doping concentration. Platinum Schottky barrier diodes (SBDs) on 1.4-mu m-thick beta-Ga2O3 homoepitaxial layers were demonstrated for the first time. The SBDs exhibited a reverse breakdown voltage of 100 V, an on-resistance of 2m Omega cm(2), and a forward voltage of 1.7 V (at 200 A/cm(2)). (C) 2012 The Japan Society of Applied Physics