☆ 4.5 Article

AlGaN/GaN-on-Silicon Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800V and On-State Resistance of 3 mΩ.cm2 Using a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process

APPLIED PHYSICS EXPRESS (2012)

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AlGaN/GaN-on-Silicon Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800V and On-State Resistance of 3 mΩ.cm2 Using a Complementary Metal-Oxide-Semiconductor Compatible Gold-Free Process

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