期刊
APPLIED PHYSICS EXPRESS
卷 5, 期 12, 页码 -出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/APEX.5.125801
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资金
- Conseil Regional Nord/Pas de Calais: under campus intelligence ambiante'' CIA CPER project
- Fonds Europeen de Developpement Economique des Regions (FEDER)
CuInS2 thin films were prepared via the sol-gel process. X-ray diffraction (XRD) studies reveal that the thin films are well crystallized and they crystallize in a chalcopyrite phase. Hall-effect measurements were carried out, for the first time, on chalcopyrite CuInS2 films elaborated by the sol-gel method. Hence, the resistivity of the p-type CuInS2 films was found to be around 40 Omega.cm and the carrier density was in the 10(16) cm(-3) range. Furthermore, the UV-vis absorption spectra show that the energy bandgap is 1.47 eV, a value close to the most favorable bandgap (1.53 eV) for solar cells. (C) 2012 The Japan Society of Applied Physics
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