期刊
APPLIED PHYSICS EXPRESS
卷 5, 期 4, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1143/APEX.5.042101
关键词
-
资金
- National Science Council of Taiwan [NSC 100-3113-E-009-001-CC2]
Efficiency and droop behavior in InGaN/GaN light-emitting diodes (LEDs) are both improved using selectively graded composition multiple quantum barriers (SGQBs). Simulation results show that SGQBs could moderately improve the hole transport in the active region. In the meantime, the spatial distribution overlap between electrons and holes in the active region could also be well considered. Therefore, the radiative recombination of the SGQB LED is more efficient than that of the conventional LED. The overall efficiency and droop behavior are simultaneously improved in the SGQB LED, at both low and high current densities. (C) 2012 The Japan Society of Applied Physics
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据