Experimental Staggered-Source and N plus Pocket-Doped Channel III-V Tunnel Field-Effect Transistors and Their Scalabilities

In this paper, we experimentally demonstrate 100% enhancement in drive current (I-ON) over In0.53Ga0.47As n-channel homojunction tunnel field-effect transistor (TFET) by replacing In0.53Ga0.47As source with a moderately staggered and lattice-matched GaAs0.5Sb0.5. The enhancement is also compared with In0.53Ga0.47As N+ pocket (delta)-doped channel homojunction TFET. Utilizing calibrated numerical simulations, we extract the effective scaling length (lambda(eff)) for the double gate, thin-body configuration of the staggered heterojunction and delta-doped channel TFETs. The extracted lambda(eff) is shown to be lower than the geometrical scaling length, particularly in the highly staggered-source heterojunction TFET due to the reduced channel side component of the tunnel junction width, resulting in improved device scalability. (C) 2011 The Japan Society of Applied Physics