期刊
APPLIED PHYSICS EXPRESS
卷 4, 期 9, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1143/APEX.4.094201
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资金
- SMF-NUS RHA [R-263-000-632-592, R-263-000-632-646]
- Agency for Science, Technology and Research of Singapore
We propose a memory device based on magnetically doped surfaces of three-dimensional topological insulators. Magnetic information stored on the surface is read out via the quantized Hall effect, which is characterized by a topological invariant. Consequently, the readout process is insensitive to disorder, variations in device geometry, and imperfections in the writing process. (C) 2011 The Japan Society of Applied Physics
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