期刊
APPLIED PHYSICS EXPRESS
卷 4, 期 6, 页码 -出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/APEX.4.062301
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High conversion efficiencies were achieved in low cost n-p heterojunction oxide solar cells with an Al-doped ZnO (AZO)/non-doped ZnO (ZO)/Cu2O structure. This achievement was made possible by the formation of an n-ZO thin-film layer, prepared with an appropriate thickness by low damage deposition, on high quality Cu2O sheets produced by the thermal oxidization of copper sheets: n-ZO thin film optimal thickness ranges from 30 to 50 nm. Photovoltaic characteristics such as an open circuit voltage of 0.69 V, a fill factor of 0.55 and a conversion efficiency of 3.83% were attained under simulated AM1.5G solar illumination. (C) 2011 The Japan Society of Applied Physics
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