期刊
APPLIED PHYSICS EXPRESS
卷 4, 期 4, 页码 -出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/APEX.4.042103
关键词
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资金
- Ministry of Education, Culture, Sports, Science and Technology (MEXT) [18069006]
- Japan Science and Technology Agency (JST)
- [21360007]
- [21560014]
- Grants-in-Aid for Scientific Research [18069006, 21360007] Funding Source: KAKEN
An ultraviolet (UV)-light-source tube using a Si-doped AlGaN film as a target of electron beam excitation was fabricated. The Si-doped AlGaN was grown on an AlN/sapphire substrate by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE), and its optical properties were evaluated by excitation with a 10 kV electron beam (EB). Emission intensity was significantly improved by Si doping and optimization of the growth conditions. 247nm deep-UV light was observed from the tube, and the lifetime of the light tube until 50% emission output of the initial strength was approximately 2000 h at an EB acceleration voltage of 10 kV with a current of 100 mu A. (C) 2011 The Japan Society of Applied Physics
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