Microwave Annealing of Very High Dose Aluminum-Implanted 4H-SiC

A microwave heating technique has been used for the electrical activation of Al+ ions implanted in semi-insulating 4H-SiC. Annealing temperatures in the range of 2000-2100 degrees C and annealing time of 30 s have been used. The implanted Al concentration has been varied from 5 x 10(19) to 8 x 10(20) cm(-3). A minimum resistivity of 2 x 10(-2) Omega cm and about 70% electrical activation of the implanted Al have been measured at room temperature for an implanted Al concentration of 8 x 10(20) cm(-3) and microwave annealing at 2100 degrees C for 30 s. (C) 2011 The Japan Society of Applied Physics