期刊
APPLIED PHYSICS EXPRESS
卷 4, 期 5, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1143/APEX.4.054204
关键词
-
资金
- Bureau of Energy, Ministry of Economic Affairs of R.O.C. [99-D0204-6]
The switching property of thin film memories with a sandwiched structure of Al/poly(2-hydroxyethyl methacrylate) (PHEMA)/ITO has been demonstrated. In terms of bistable current-voltage (I-V) characteristics, the conduction mechanisms at low and high resistance states were characterized by an ohmic behavior and the space charge limit current dominated, respectively. The resistive switching behavior was explained by the presence of the carbon filaments, which was confirmed by observing the carbon ions diffusing in the PHEMA film in time-of-flight secondary ion mass spectrometry. Our devices have high current on/off (> 10(3)), reliable switching endurance over 500 write-read-erase-read cycles, and long retention time (> 10(4) s). (C) 2011 The Japan Society of Applied Physics
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据