Above 600 mS/mm Transconductance with 2.3A/mm Drain Current Density AlN/GaN High-Electron-Mobility Transistors Grown on Silicon

AlN/GaN high-electron-mobility transistors (HEMTs) capped with an in-situ grown SiN have been successfully developed on 100 mm Si substrates. A unique combination of maximum output current density exceeding 2A/mm and a record extrinsic transconductance above 600 mS/mm has been reached, which is well beyond the highest reported values of any GaN-on-Si HEMTs. The current gain extrinsic cutoff frequency f(T) and the maximum oscillation frequency f(max) were 85 and 103 GHz with 0.16-mu m gate length, respectively, resulting in a high f(T) - L-g product that promises low-cost, high performance millimeter wave electronics. (C) 2011 The Japan Society of Applied Physics