4.5 Article

Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Physics, Applied

Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition

David F. Brown et al.

JOURNAL OF APPLIED PHYSICS (2010)

Article Physics, Applied

Mechanism of compositional modulations in epitaxial InAlN films grown by molecular beam epitaxy

S. -L. Sahonta et al.

APPLIED PHYSICS LETTERS (2009)

Article Engineering, Electrical & Electronic

fT and fMAX of 47 and 81 GHz, Respectively, on N-Polar GaN/AlN MIS-HEMT

Nidhi et al.

IEEE ELECTRON DEVICE LETTERS (2009)

Article Physics, Applied

A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy

S. Fernandez-Garrido et al.

APPLIED PHYSICS LETTERS (2008)

Article Engineering, Electrical & Electronic

N-face metal-insulator-semiconductor high-electron-mobility transistors with AlN back-barrier

Man Hoi Wong et al.

IEEE ELECTRON DEVICE LETTERS (2008)

Article Physics, Applied

N-polar GaN/AlGaN/GaN high electron mobility transistors

Siddharth Rajan et al.

JOURNAL OF APPLIED PHYSICS (2007)

Article Physics, Applied

High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures

M. Gonschorek et al.

APPLIED PHYSICS LETTERS (2006)

Article Physics, Applied

High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN

JF Carlin et al.

APPLIED PHYSICS LETTERS (2003)

Article Engineering, Electrical & Electronic

Power electronics on InAlN/(In)GaN:: Prospect for a record performance

J Kuzmík

IEEE ELECTRON DEVICE LETTERS (2001)