期刊
APPLIED PHYSICS EXPRESS
卷 3, 期 6, 页码 -出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/APEX.3.065203
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资金
- Ministry of Education, Culture, Sports, Science and Technology of Japan
Great suppression of fine-structure splitting (FSS) is demonstrated in self-assembled GaAs quantum dots (QDs) grown on AlGaAs(111)A surface. Due to the three-fold rotational symmetry of the growth plane, highly symmetric excitons with significantly reduced FSS are achieved. Scanning tunneling microscopy and cross-sectional transmission microscopy demonstrate a laterally symmetric dot shape with abrupt interface. Polarized photoluminescence spectra confirm excitonic transition with FSS smaller than similar to 20 mu eV, a substantial reduction from that of QDs grown on ( 100). (C) 2010 The Japan Society of Applied Physics
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