Nitrogen-Doped Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite Films Prepared by Pulsed Laser Deposition

Nitrogen-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films were deposited by pulsed laser deposition. The film doped with a nitrogen content of 7.9 at.% possessed n-type conduction with an electrical conductivity of 18 Omega(-1) center dot cm(-1) at 300 K. A heterojunction with p-type Si exhibited typical rectifying action. The UNCD grain size was estimated to be 2.5 nm from X-ray diffraction measurement. Near-edge X-ray absorption fine-structure and Fourier transform infrared spectroscopies revealed the preferential formations of C=N and C-N bonds and an enhanced amount of sp(2) bonds in the films. (C) 2010 The Japan Society of Applied Physics