Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

Vertical GaN Schottky barrier diodes (SBDs) were fabricated on freestanding GaN substrates with low dislocation density High quality n-GaN drift-layer with an electron mobility of 930 cm(2) V(-1) s(-1) was obtained by optimizing the growth conditions by reducing the intensity of yellow luminescence using conventional photoluminescence measurements The specific on-resistance (R(on) A) and the breakdown voltage (V(B)) of the SBDs were 0 71 m Omega cm(2) and over 1100 V. respectively The figure of merit (V(B)(2)/R(on) A) was 1 7 GW/cm(2), which is the highest value among previously reported SBDs for both GaN and SiC (C) 2010 The Japan Society of Applied Physics