期刊
APPLIED PHYSICS EXPRESS
卷 3, 期 12, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1143/APEX.3.121003
关键词
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资金
- Global Center of Excellence (COE) Program
- Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT)
- New Energy and Industrial Technology Development Organization (NEDO)
AlGaN-channel high-electron-mobility transistor (HEMT) with high Al composition of 0.51 has been developed. The epitaxial layers were grown on a free-standing AlN substrate to improve crystalline quality. The fabricated device exhibited a maximum drain current (I-dsmax) of 25.2 mA/mm with a maximum transconductance (g(mmax)) of 4.7 mS/mm. The characteristic features of the device were a high source-to-drain breakdown voltage of 1800 V and a high applicable gate-to-source voltage of 4 V in the forward direction. Temperature dependence of DC characteristics demonstrated that the drain current degradation at elevated temperatures for the AlGaN-channel HEMT was appreciably small as compared with the conventional AlGaN/GaN HEMT. This is the first report showing successful DC operation of AlGaN-channel HEMT with high Al composition of over 0.5. (C) 2010 The Japan Society of Applied Physics
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