期刊
APPLIED PHYSICS EXPRESS
卷 2, 期 12, 页码 -出版社
JAPAN SOCIETY APPLIED PHYSICS
DOI: 10.1143/APEX.2.121004
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资金
- National Science Foundation (NSF) [DMR05-20415]
- Defense Advanced Research Projects Agency (DARPA)
An m-plane-GaN based blue superluminescent diode was demonstrated utilizing the asymmetric chemical properties of the c facets. The non-reflecting -c plane facet, intended to prevent optical feedback along the c-axis waveguide, was fabricated by KOH wet etching. KOH selectively etched the cleaved -c facet leading to the formation of hexagonal pyramids without etching the +c facet. The peak wavelength and full width at half max were 439 and 9 nm at 315 mA, respectively, with an output power of 5 mW measured out of the +c facet. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.121004
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