期刊
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
卷 53, 期 2, 页码 571-581出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TMTT.2004.840635
关键词
amplifier noise; intermodulation distortion; MOSFET amplifiers; nonlinearities; Volterra series
Intermodulation distortion in field-effect transistors (FETs) at RP frequencies is analyzed using the Volterra-series analysis. The degrading effect of the circuit reactances on the maximum IIP3 in the conventional derivative-superposition (DS) method is explained. The noise performance of this method is also analysed and the effect of the subthreshold biasing of one of the FETs on the noise figure (NF) is shown. A modified DS method is proposed to increase the maximum IIP3 at RF It was used in a 0.25-mum Si CMOS low-noise amplifier (LNA) designed for cellular code-division multiple-access receivers. The LNA achieved +22-dBm IIP3 with 15.5-dB gain, 1.65-dB NF, and 9.3 mA@2.6-V power consumption.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据