期刊
APPLIED PHYSICS EXPRESS
卷 1, 期 4, 页码 -出版社
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/APEX.1.041202
关键词
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We developed a method to control threshold voltage and on/off ratio of ZnO thin-film transistor (TFT) grown by metalorganic chemical vapor deposition (MOCVD). ZnO usually shows oxygen deficiency, which shows up as n-type defects of zinc interstitial or oxygen vacancy. In order to reduce these defects, we allowed sufficient oxidation time during growth. Instead of one long oxidation step, we repeated thin-layer growth and oxidation, until desired thickness is achieved. By using this method, we could obtain high quality ZnO TFT by MOCVD. Our ZnO TFT grown at 450 degrees C showed 15cm(2)/(VS) mobility and 107 on/off ratio, with +5V threshold voltage, which enables enhancement mode TFT operation. (C) 2008 The Japan Society of Applied Physics.
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