Green photoluminescence from GalnN photonic crystals

We have investigated green-emitting GalnN two-dimensional photonic crystals with air holes that penetrate through the active layer. At room temperature, the observed photoluminescence intensity from the photonic crystal is approximately three times that of a sample with no photonic crystal structure. This is due to the low surface recombination velocity (1.4 x 10(3) cm/s) of GalnN at the air hole edges and a higher degree of light extraction by the diffraction effect. (C) 2008 The Japan Society of Applied Physics.