A GaAs/AlAs multilayer cavity with self-assembled InAs quantum dots embedded in strain-relaxed barriers for ultrafast all-optical switching applications

An optical Kerr signal has been simulated for GaAs/AlAs multilayer cavity structures by using the self-consistent transfer matrix method. Enhancement of the Kerr signal intensity was clearly demonstrated for the cavity mode (lambda similar to 1504 nm) owing to the strong optical field in the multilayer cavity. The Kerr signal intensity can be further enhanced with the use of a higher nonlinear refractive index only for the half-wavelength (lambda/2) cavity layer. We propose a GaAs/AlAs multilayer structure with the lambda/2 cavity layer containing InAs quantum dots embedded in strain-relaxed barriers for an ultrafast optical Kerr gate switch with extremely low switching energy. (C) 2008 The Japan Society of Applied Physics.