Blue (Ga,In)N/GaN Light Emitting Diodes on Si(110) Substrate

We have fabricated and characterized blue (Ga,In)N/GaN multiple quantum well light emitting diodes grown on a Si(l 10) substrate by molecular beam epitaxy. For a 20 mA current, we have found that the operating voltage and the series resistance are as low as 3.5 V and 17 Omega, respectively. A maximum light output power of 72 mu W is obtained as measured on the wafer. These characteristics are almost identical to those obtained on a reference sample grown on the commonly used Si(111) orientation. (C) 2008 The Japan Society of Applied Physics