期刊
APPLIED PHYSICS EXPRESS
卷 1, 期 12, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1143/APEX.1.121101
关键词
-
资金
- Agence Nationale de la Recherche-Progrannne National en Nanosciences et Nanotechnologies
We have fabricated and characterized blue (Ga,In)N/GaN multiple quantum well light emitting diodes grown on a Si(l 10) substrate by molecular beam epitaxy. For a 20 mA current, we have found that the operating voltage and the series resistance are as low as 3.5 V and 17 Omega, respectively. A maximum light output power of 72 mu W is obtained as measured on the wafer. These characteristics are almost identical to those obtained on a reference sample grown on the commonly used Si(111) orientation. (C) 2008 The Japan Society of Applied Physics
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据