4.4 Article

Tellurium and sulfur doped GaSe for mid-IR applications

期刊

APPLIED PHYSICS B-LASERS AND OPTICS
卷 108, 期 3, 页码 545-552

出版社

SPRINGER HEIDELBERG
DOI: 10.1007/s00340-012-5067-9

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资金

  1. National Basic Research Program of China [2011CB921603]
  2. NSFC [11074097]
  3. RF [NS-512.2012.2]
  4. RFBR [12-08-0042]
  5. SB RAS IIP [46]
  6. [SKLIM090301 CIOMP]

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Centimeter-sized Te:GaSe (a parts per thousand currency sign10 mass%) ingots have been grown by the vertical Bridgman technique and studied to reveal the potentials for phase matching and frequency conversion. Less than 5 mass% Te-doped crystals show the hexagonal structure like epsilon-GaSe. Te:GaSe (a parts per thousand currency sign2 mass%) crystals were suitable for non-linear applications. The optimal Te-doping level between 0.1 and 0.5 mass% has been clearly observed in CO2 laser SHG experiment. The CO2 laser SHG efficiency in Te:GaSe (0.1-0.5 mass%) is similar to 20 % higher than that of GaSe due to better optical quality. Phase matching conditions in Te-doped crystals have been shown to be identical with those of GaSe.

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