期刊
APPLIED PHYSICS B-LASERS AND OPTICS
卷 109, 期 4, 页码 605-609出版社
SPRINGER HEIDELBERG
DOI: 10.1007/s00340-012-5219-y
关键词
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资金
- national natural science foundation of China [60976010, 61076045, 11004020]
- national high technology research and development program (863 program) [2011AA03A102]
- fundamental research funds for the central universities [DUT12LK22, DUT11LK43, DUT11RC(3)45]
- research fund for the doctoral program of higher education [20110041120045]
- state key laboratory of functional materials for informatics
N-ZnO/Ga2O3/p-GaN heterojunction light-emitting diode (LED) was fabricated by metal-organic chemical vapor deposition. Compared with the n-ZnO/p-GaN structure, the deep level visible emission at 525 nm was completely suppressed while UV emission at similar to 392 nm was significantly improved in ZnO/Ga2O3/p-GaN structure. The role of Ga2O3 in n-ZnO/Ga2O3/p-GaN heterojunction LED was discussed in detail.
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