期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 52, 期 2, 页码 269-275出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2004.841331
关键词
E-textiles; flexible; organic thin-film transistor (TFT); pentacene
Flexible transistors were formed directly on fibers in a novel weave-masking fabrication process. Pentacene fiber transistors exhibit mobilities of > 0.5 cm(2) /V-s measured at 20 V V-DD and operate stably under a wide range of flexion stress. Devices are defined and positioned solely by a weaving pattern, meaning that simple circuits could potentially be directly built into fabric during manufacturing. This development offers a novel approach for providing information routing within fabric, which is currently a major hurdle in electronic textile development.
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